Webinar Series: The Wednesday Webinar Series #8 Date Recorded: 09.09.2026 Recording Now Live on YouTube: https://youtu.be/DpNBQSKPUwE
We are thrilled to announce that the recording for The Wednesday Webinar Series #8 is now available for viewing!
📝 About the Session
In this ALL2GaN webinar, Ander Avila from IKERLAN explores the role of Gallium Nitride (GaN) in the evolving power electronics landscape and explains where GaN delivers the greatest value alongside established Silicon (Si) and Silicon Carbide (SiC) technologies. Drawing on insights from 11 ALL2GaN use cases spanning telecommunications, transport, data centres, renewable energy and smart grids, the webinar presents real-world evidence of how GaN-based solutions can achieve power loss reductions of around 30% while enabling higher efficiency and power density.
The session highlights practical lessons learned from developing and validating demonstrators close to market deployment, including wireless EV charging, server power supplies, photovoltaic inverters and telecom infrastructure. It also discusses key design considerations, technology trade-offs, and the importance of selecting the right semiconductor technology for each application. The webinar concludes with an outlook on future GaN adoption and its contribution to more energy-efficient and sustainable power electronic systems.
Although GaN devices offer superior switching speed, efficiency, and power density, the full exploitation of their capabilities is often hampered by conventional packaging technologies. This webinar explores advanced interconnect and heterogeneous integration technologies for GaN packaging in both RF and power applications. It will address top-side interconnects in chip-on-board GaN micro-assemblies, ultra-fine-pitch flip-chip techniques, and 3D die stacking, highlighting how these approaches reduce parasitic effects, improve thermal management, and enable highly integrated, high-power-density GaN systems.
About the Speaker:
Name / Surname
Ali ROSHANGHIAS
Abhinay NALLAM
Farough ROUSTAIE
Organisation / University
SAL Silicon Austria Labs GmbH
Heraeus Electronics GmbH & Co. KG
NanoWired GmbH
Title in the Organisation
Head of Research Unit for Heterogeneous Integration Technologies
Testing Engineer
Co-founder & Co-CEO
Role in ALL2GaN Project
Leader in Work Package 4 "Integration and packaging of GaN devices"
Development and qualification of packaging materials in GaN devices
Development of die attach material and NanoWiring of wafers in Work Package 4
Academic Background
Dr. Ali Roshanghias is the head of the research unit for heterogeneous integration technologies at Silicon Austria Labs (SAL). He received his Ph.D. in materials science and technology in 2012. He pursued his career as a post-doc researcher in Japan and Austria in the fields of electronic materials and advanced microelectronics packaging. In 2015 he joined SAL (formerly known as CTR Carinthian Tech Research AG). He is the author of more than 100 scientific papers and patents and serves as a lecturer at the University of Klagenfurt.
Abhinay Nallam is a Testing Engineer at Heraeus Electronics GmbH & Co. KG, working in the Engineering Services and Testing Department since 2023. He completed his Bachelor's degree in Mechanical Engineering, India and subsequently pursued a Master's degree in Chemical and Energy Engineering at Otto von Guericke University Magdeburg, Germany. In 2021, he worked as a Research Assistant at Fraunhofer IWS, Dresden. He further strengthened his industrial expertise through his Internship and Master's Thesis at Robert Bosch GmbH in 2022. Alongside his professional role at Heraeus, he has been an active sub-group member of ECPE (European Center for Power Electronics) since 2023.
Dr.-Ing. Farough Roustaie earned his degree (Dr.-Ing.) from TU Darmstadt, specializing in Microsystems Technology and Micro/Nano Systems. His research focused on the fabrication and integration of metallic nanostructures, field emission devices, and advanced interconnection technologies for microelectronics packaging. He has successfully transferred research results into industry as Co-Founder and Co-CEO of NanoWired GmbH.
Key Publications
A Fast Multidomain System-Level Simulation Model for GaN Transistor Package Optimization." 2026 (EuroSimE). IEEE, 2026.
An Introduction to wire-bondless discrete GaN power packages with top-side Cu Sinterconnects®. 2024 IEEE (ESTC). IEEE, 2024.
Magnetoresistive sensor for current monitoring in wire-bondless power modules." IEEE Sensors Journal (2026).
Evaluating Cu Printed Interconnects “Sinterconnects” versus Wire Bonds for Switching Converters." Electronics 11.9 (2022): 1373.
"Thermosonic direct Cu pillar bonding for 3D die stacking." SN Applied Sciences 2.6 (2020): 1091.
Low-Resistance Room-Temperature Interconnection Technique for Bonding Fine Pitch Bumps (2021)
Room Temperature KlettWelding Interconnect Technology for High Performance CMOS Logic (2021) [scholar.google.com]
Novel Fabrication Method for Integration of Template-Grown Metallic Nanocones with Controllable Tip Diameter and Apex Angle (2017) [scholar.google.com]
In Situ Synthesis of Metallic Nanowire Arrays for Ionization Gauge Electron Sources (2016)
Why GaN?
Although GaN devices offer superior switching speed, efficiency, and power density, the full exploitation of their capabilities is often hampered by conventional packaging technologies. This webinar explores advanced interconnect and heterogeneous integration technologies for GaN packaging in both RF and power applications. It will address top-side interconnects in chip-on-board GaN micro-assemblies, ultra-fine-pitch flip-chip techniques, and 3D die stacking, highlighting how these approaches reduce parasitic effects, improve thermal management, and enable highly integrated, high-power-density GaN systems.
GaN offers much faster switching and lower power losses than silicon, enabling higher frequencies, smaller passives and higher power density at lower system cost. But GaN is a lateral device with all contacts on a thin top surface, so conventional power-module packaging does not apply. Unlocking GaN's performance is an interconnect and materials challenge.
GaN enables higher efficiency, higher switching frequencies, and greater power density. NanoWired's room-temperature interconnection technology further enhances these benefits by reducing electrical resistance and inductance while minimizing thermal stress, allowing GaN devices to reach their full performance potential.
In this webinar, Ander from IKERLAN will share a practical perspective on Gallium Nitride (GaN) within today’s power electronics landscape, where Silicon (Si), Silicon Carbide (SiC) and GaN each have their place. Instead of presenting GaN as a one-size-fits-all solution, the session focuses on where it really makes a difference, helping engineers understand when and why to use it. Based on the ALL2GaN Use Cases, Ander will illustrate how GaN is already enabling around 30% reductions in power losses in real demonstrators and will reflect on the key lessons learned when moving from research to deployable hardware across different sectors.
This work directly supports Ander's activities as WP6 leader in the ALL2GaN project, where he coordinates a portfolio of 11 Use Cases spanning telecommunications, transport, and data centers, renewables and smart grid. WP6 acts as the ultimate proving ground for the ALL2GaN "Integration Toolbox", stress-testing GaN devices from wireless and bidirectional EV chargers to server power supplies, PV inverters and telecom infrastructure.
About the Speaker:
Name / Surname
Ander AVILA
Organisation / University
IKERLAN Technologies Research Centre
Title in the Organisation
Senior Researcher in the Power Electronics area
Role in ALL2GaN Project
WP6 Leader (Use Cases for greener and smarter applications) & UC5 Leader (compact, smart contactless EV battery charger)
Academic Background
PhD in Electrical and Electronic Engineering: Advanced Power-Electronic Converters Based on GaN Semiconductors (University of Oviedo / IKERLAN).
His research focuses on wide-bandgap converters for electric vehicles and energy storage, and on the reliability of GaN-based power systems.
Key Publications
Author of nearly 30 publications in GaN-based power conversion for electric mobility and energy storage.
A Modular Multifunction Power Converter Based on a Multiwinding Flyback Transformer for EV Application — A. Avila et al., IEEE Transactions on Transportation Electrification, vol. 8(1), pp. 168–179, 2021
Hybrid Energy Storage System Based on Li-Ion and Li-S Battery Modules and GaN-Based DC-DC Converter — A. Avila et al., IEEE Access, vol. 9, pp. 132342–132353, 2021
Why GaN? What excites you about the project?
Because it is the missing piece of the puzzle. While Si and SiC excel in many applications, GaN unlocks ultra-high-frequency operation and compact designs that were previously impossible, complementing existing technologies to build the green power systems of the future. The challenge is no longer just making a good chip; it is optimally combining Si, SiC and GaN, mastering high-performance design, and guaranteeing long-term reliability, so green solutions are adopted by industry at scale.
ALL2GaN is proud to present the latest video highlighting Use Case 9 : “PV Inverter”.
Fronius International GmbH is leading this Use Case in cooperation with Infineon Austria, Infineon Warstein, Fraunhofer and TU Chemnitz.
After collaborating in PowerBase and UltimateGaN, Fronius leads the Use Case 9 "PV inverter" in ALL2GaN with the aim of bringing the sun into the house in the most efficient way. Within the ALL2GaN Project Fronius made a big step forward bringing GaN into future PV inverters.
Thank you to Fronius for preparing this video!
Watch the full video here: https://youtu.be/awM8rhzvl_E
ALL2GaN is proud to present the latest video highlighting Use Case 7 : “Compact inverter for BLDC motor for ultra small vehicles”.
NanoDesign is leading this Use Case in cooperation with the Faculty of Electrical Engineering and Informatics, Slovak University of Technology in Bratislava (STUFEI) and Infineon.
The aim is to develop a compact and efficient GaN-based inverter for medium power (up to 20 kW) Brushless DC (BLDC) motors, which can be integrated into the motor housing, reducing the volume and costs of the drive system. The goal is to create a highly integrated inverter that uses the motor cooling system with a small increase in volume of the motor itself.
ALL2GaN is proud to present the latest video highlighting Use Case 3 : “Railway Application”.
Premium PSU is leading Use Case 3 in partnership with IKERLAN.
The objective of this use case is to develop two GaN-based cost-effective inverter and battery chargers for railway applications, which can operate bidirectionally and in parallel, allowing for scalability and safety.
The goal is to create a unique inverter that is bidirectional, parallelable, and redundant, with the target of being the smallest and with the highest density in the world.
Thank you to Premium PSU for preparing this video!
Watch the full video here: https://youtu.be/vyDv3zZokDE
ALL2GaN is proud to present the latest video highlighting Use Case 5: “EV Wireless Charger”.
IKERLAN is leading Use Case 5 in partnership with Aalborg University.
The objective of this use case is to develop an 85kHz wireless battery charger based on automotive standard J2954 and ISO 15118-20:2022, using GaN semiconductor technology.
The goal is to create a compact and low-profile power converter that can transmit power up to 100mm, with a high power factor correction, bidirectionality, and battery voltage and current controls.
We are thrilled to announce that the recording for The Wednesday Webinar Series #7 is now available for viewing!
📝 About the Session
In the All2GaN project Signify is leading Use Case 11, being Lighting applications. Use Case 11 explores the benefits and the reliability of GaN for mainstream LED drivers in indoor and outdoor applications. In this use case Signify works together with Infineon, Eindhoven University of Technology, Technical University Chemnitz, and Aalborg University.
The webinar starts with an introduction of Signify as world leader in lighting. After that the general key value drivers for LED drivers and how they translate into objectives and expected impact for the All2GaN project, those are discussed. The benefits of GaN for several LED driver topologies are shown. Next topic is the contribution of GaN devices to the overall LED driver reliability and the exploration of non-invasive component parameter estimation that can be used to obtain early warning indicators for device degradation.
We are thrilled to announce that the recording for The Wednesday Webinar Series #6 is now available for viewing!
📝 About the Session
The webinar of Daniel Rios Linares from the Universidad Politecnica de Madrid presents design and experimental validation of high-frequency three-phase LLC converters developed for next-generation aircraft DC power systems. The talk covers resonant converter design, integrated planar magnetics, and innovative wye-delta transformer architectures that enable compact 1 MHz operation with efficiencies exceeding 96%.
The webinar highlights how wide bandgap (WBG) technologies, particularly Gallium Nitride (GaN), are enabling unprecedented power densities and switching frequencies, making them a key technology for future aerospace electrification. Attendees gain insight into the challenges of designing high-performance resonant converters and the opportunities they create for More Electric Aircraft (MEA) and other demanding power electronics applications.
ALL2GaN Newsletter
To stay up to date with the project please subscribe to our free newsletter:
We use cookies and similar technologies (also from third parties) to collect your device and browser information for a better understanding on how you use our online offerings. Details are available in our privacy policy where you can also change your preferences on cookies at any time.
These cookies are necessary for the website to function and cannot be switched off in our systems. They are usually only set in response to actions made by you, which amount to a request for services, such as setting your privacy preferences, logging in, or filling in forms.
Protects against cross-site request forgery attacks.
Retention period: This cookie only persists for the current browser session.
Saves the current PHP session.
Retention period: This cookie only persists for the current browser session.
The performance and effectiveness of content that you see or interact with can be measured.
The data collected is not used for any other purpose than analytics, visitors aren’t tracked across websites, fingerprints change daily for every visitor.
