A European semiconductor manufacturer specializing in custom engineered Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers, SweGaN AB develops and manufactures materials based on its unique patented growth technology, QuanFINE®, to serve the world’s leading IDMs/Foundries, Fabless, and system manufacturers.
Our mission: To harness the tremendous power of GaN, releasing the material’s full potential and empowering our customers to pioneer and innovate the next generation of high power and high frequency semiconductor devices.
Company profile
Headquartered in Linköping, Sweden, SweGaN provides unique solutions for GaN-on-SiC epiwafers based on its groundbreaking SweGaN QuanFINE® epitaxial growth technology serving manufacturers of RF and power devices used in telecom, defense, and satellite communications and high-voltage power device applications. SweGaN’s high-performance material enables customers to quickly adapt to the evolving demands of next-generation high power and high frequency devices to create future-oriented solutions. Bespoke services include expertise within material characterizations, device processing, and evaluation services.
SweGaN’s new, high-volume production facility is located at the Innovative Materials Arena (IMA), a technology cluster for innovative materials located in Linköping. For more information, visit us as www.swegan.se and LinkedIn.
SweGaN’s unique epitaxial material is used in telecom, defense, satellite communications and high-voltage power device applications.
Role in the project
SweGaN AB is a partner in WP1 (GaN power devices and IC’s up to 100 V and substrate topics) and will be involved in Task 1.1.2 Alternative substrates. SweGaN AB will develop buffer-free GaN-on-SiC epitaxy on both 100mm and 150mm standard semi-insulating (SI) and non-standard, cost-effective SI SiC substrates for D-mode and E-mode 1200V GaN power devices with- specific Ron that is comparable to that of SiC MOSFETs and then transfer the epitaxy process to a high-volume production reactor.
Key contribution
SweGaN AB has developed a revolutionary buffer-free GaN on SiC structure - QuanFINE®. The high performance of SweGaN QuanFINE® materials enables the development of next generation high power and high frequency devices and creation of future-oriented solutions. SweGaN will contribute with QuanFINE substrates for 1200V HEMTs and top QuanFINE AlGaN/GaN/AlN epi-stack for low voltage (100V) D-mode HEMTs. The ALL2GaN research will enable SweGaN to offer epi-wafers as a new product for high-voltage power applications such as on-board chargers used for EVs.
SweGaN AB
Linköping headquarters
IMA 1, Pursergatan 1
58278 Linköping, Sweden
swegan.se
Other Consortium Partners
