SweGaN AB. develops and manufactures custom-made Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology QuanFINE®) to serve the world’s leading IDMs/Foundries, Fabless, and system manufacturers providing products for telecom, satellite, defense, and power electronics applications. We supply benchmark high-performance material to provide our customers with a strong competitive advantage.
SweGaN AB, headquartered in Linköping, Sweden, has developed the revolutionary QuanFINE®. buffer-free GaN on SiC structure. High-performance SweGaN QuanFINE® materials enable development of next generation high power and high frequency devices and future-oriented solutions. SweGaN AB is currently in an expansion phase. To meeting growing market demand, the technology company is building a new high-volume facility for production of SweGaN QuanFINE® materials at the Innovative Materials Arena (IMA), a technology cluster for innovative materials located in Linköping, in Östergötland, Sweden. The new facility will start production in August 2023. Additionally, SweGaN offers expertise in material characterizations, device processing, and evaluation services.
High-performance SweGaN QuanFINE® materials enable development of next generation high power and high frequency devices and future-oriented solutions.
Role in the project
SweGaN AB is a partner in WP1 (GaN power devices and IC’s up to 100 V and substrate topics) and will be involved in Task 1.1.2 Alternative substrates. SweGaN AB will develop buffer-free GaN-on-SiC epitaxy on both 100mm and 150mm standard semi-insulating (SI) and non-standard, cost-effective SI SiC substrates for D-mode and E-mode 1200V GaN power devices with- specific Ron that is comparable to that of SiC MOSFETs and then transfer the epitaxy process to a high-volume production reactor.
SweGaN AB has developed a revolutionary buffer-free GaN on SiC structure - QuanFINE®. The high performance of SweGaN QuanFINE® materials enables the development of next generation high power and high frequency devices and creation of future-oriented solutions. SweGaN will contribute with QuanFINE substrates for 1200V HEMTs and top QuanFINE AlGaN/GaN/AlN epi-stack for low voltage (100V) D-mode HEMTs. The ALL2GaN research will enable SweGaN to offer epi-wafers as a new product for high-voltage power applications such as on-board chargers used for EVs.