The Institute of Electronic Structure and Laser (IESL) of FORTH at Heraklion, Crete, is an internationally recognized center of excellence in Lasers and Applications, Microelectronics and Devices, Polymer Science and Theoretical and Computational Physics.
IESL-FORTH aims to:
- Sustain and advance basic and applied research and promote and advance technology in Greece.
- Develop expertise in selected advanced technological fields and exploit this either via sales of specialized innovative products and services or via the transfer of knowledge and expertise for the benefit of Greek and European industry and the broader public sector.
It offers full-scale research facilities in compound semiconductor micro/nano-optoelectronics working on III-arsenides, III-nitrides, SiC, carbon electronics and 2D material based nano electronics.
Role in the project
IESL-FORTH provides the unique in All2GaN expertise of first-principles calculations on semiconductors. IESL-FORTH participates in WP 2 and investigates the intrinsic aspect of extended and point defects and their influence on the device performance.
IESL-FORTH will contribute with its expertise to elucidate the interplay between material properties and device performance. To achieve this will develop and apply ab-initio based Computational Materials methodologies to investigate the electronic structure, thermodynamics, and kinetics of extended defects and their interaction with extrinsic and intrinsic point defects/impurities and identify the atomistic mechanisms that govern device performance, failure, and degradation.