Variable "toolbox" for fast integration

Following the development of cost-efficient GaN chips, the research team is now working on a crucial milestone: the novel GaN power semiconductors will be modular and easily embedded in many applications through the integration toolbox. The research extends from individual chip elements, high-performance GaN modules, to chip designs and novel system-on-chip approaches. The advantage: variably adaptable GaN system solutions mean faster integration into applications, energy efficiency increases, and CO2 emissions decrease.

Telecommunications, data centers and server farms will benefit from the new, highly integrable GaN chip generation "Made in Europe", as will e-mobility, renewable energies and highly efficient smart grid solutions. Projections show that this new GaN chip generation can reduce energy losses in applications by an average of 30 percent. This is roughly equivalent to 218 megatons of CO 2 saved worldwide.

ALL2GaN kick-off with AIMS5.0 and renowned participants from across Europe

After a press conference on Monday, the kick-off event and thus the official project start of ALL2GaN, coordinated by Infineon in Villach, as well as the research project AIMS5.0, coordinated by Infineon in Munich, took place on May 23-25, 2023 in Villach. Both EU projects are co-funded by the KDT-JU (Key Digital Technologies Joint Undertaking) program of the European Union and the participating countries.