Nexperia is a leading expert in the high-volume production of essential semiconductors, components that are required by every electronic design in the world. The company’s extensive portfolio includes diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs and analog & logic ICs that meet the stringent standards set by the Automotive industry.
Headquartered in Nijmegen, Netherlands, Nexperia annually ships more than 100 billion products. These products are recognized as benchmarks in efficiency - in process, size, power and performance - with industry-leading small packages that save valuable energy and space. With decades of experience, supplying to the world’s biggest companies, Nexperia has over 14,000 employees across Asia, Europe and the U.S., offering global support. Nexperia's manufacturing facilities are fully vertically integrated and deliver optimized high-volume production. These include our own waferfabs in Hamburg (Germany), Manchester and Newport (UK), as well as three assembly centers in Guangdong (China), Seremban (Malaysia) and Cabuyao (Philippines). Nexperia also has numerous research and development facilities around the globe. These include dedicated product R&D centers at our three front-end fabrication locations, as well as centers at our headquarters in Nijmegen (Netherlands), in Hong Kong, Penang (Malaysia) and Dallas.
With decades of experience, supplying to the world’s biggest companies, Nexperia has over 14,000 employees across Asia, Europe and the U.S., offering global support.
Role in the project
Nexperia will contribute to the project through the design and manufacture of a cascode GaN-based power module suitable for highly efficient on-board chargers (OBC) for automotive applications in WP4, which focuses on the integration and packaging of GaN devices.
Nexperia will contribute to the ALL2GaN project in the following ways:
- Supply of Nexperia-designed and manufactured 650V GaN cascode chips for prototype assembly.
- Assessment of new packaging concepts for development of a cascode GaN module including chip-to-wafer/chip-to-chip bonding and die, substrate and clip bonding.
- Design and optimisation of a half-bridge cascode GaN power module for on-board charger applications.
- Manufacture of half-bridge cascode GaN power module prototype.