Objectives
The ALL2GaN mission is substantiated through the set of eight overall objectives.
Objective 1
Push the limits of industrial GaN devices and system-on-chip approaches for ≤100V
Objective 2
Leverage the full potential of innovative substrates for GaN
Objective 3
Achieve novel benchmark solutions for lateral GaN devices and integrated circuits ≥650V
Objective 4
Reach best technical and cost performance of RF GaN on Si with novel integration concepts
Objective 5
Breaking the packaging limits by application driven integrated solutions of high performance GaN products
Objective 6
Advance the methods to evaluate and optimize reliability and robustness of GaN components, modules, and systems for shortest time-to-market and maximum product availability at the end user
Objective 7
Demonstrate highest affordable performance for greener power electronics and RF applications
Objective 8
Road-mapping for the future GaN technology development and applications to support long-term exploitation/business cases and European leadership beyond ALL2GaN