KAI is a well-established industrial research center with experience in materials science and characterization of material defects as well as device physics necessary to understand the electrical impact of these defects.
KAI (“Kompetenzzentrum Automobil- und Industrieelektronik”) GmbH was founded by Infineon and other industrial and academic partners in 2006 as an industrial competence center. Today, KAI is a legally independent subsidiary, 100% owned by Infineon Technologies Austria AG. It is a well-established industrial research center with a broad national and international network of industrial and academic partners. Additional to core competences in the area of power electronics reliability test concept development, advanced semiconductor materials research, statistical lifetime modeling and multi-physics FEM simulation, KAI maintains a well-equipped electronics and physical characterization laboratory as well as state of the art simulation computing resources and proven experience in the coordination of interdisciplinary research projects.
KAI is a well-established industrial research center with a broad national and international network of industrial and academic partners.
Role in the project
KAI leads the task 2.4.2 (“Exploration of analytic & intrinsic aspects of dislocations”) with eight other partners and contributes to the overall goals of objective 2.4 (“Exploring the limits: Develop 1200V GaN HEMT devices on QST substrate and understand material benefits”).
KAI’s main contribution is to do physical and electrical characterization, counting and labelling of crystal defects, dislocations and point defects in high-voltage GaN stacks. We will focus on the development of nondestructive SEM based techniques to visualize and characterize dislocations in GaN stacks, automatically identify them using computer vision techniques and assess their electrical importance. Together with THERMO the goal is to enable fab-based near-line analytical characterization.