Silicon Austria Labs GmbH (SAL) is a top European research center for electronic based systems (EBS), which are the technological backbone of digitization. The application-oriented center offers cooperative research at three locations – Graz, Linz and Villach – in the pioneering research areas of Microsystems, Sensor Systems, Intelligent Wireless Systems, Power Electronics and Embedded Systems.
From power electronics in e-mobility to sensor technologies in photovoltaic systems to the next generation of 6G data transmission– in the top research center Silicon Austria Labs (SAL), research on future technologies in the field of electronic-based systems (EBS) is conducted. SAL is offering R&D services within the five research divisions Sensor Systems, Microsystems, Power Electronics, Intelligent Wireless Systems and Embedded Systems to develop future-oriented solutions for industrial production, health, energy, mobility and safety. SAL brings together key players from industry, science and research and thus valuable expertise and know-how and conducts cooperative, application-oriented research along the value chain. Cooperative projects are co-financed by SAL and enable a fast and unbureaucratic project start. SAL is thus shaping the high-tech locations Austria and Europe and "unfolds the future".
SAL brings together key players from industry, science and research and thus valuable expertise and know-how and conducts cooperative, application-oriented research along the value chain.
Role in the project
SAL serves as the WP4 Leader for the Integration and Packaging of GaN devices. Within this work package, SAL develops innovative interconnects and packaging solutions (SiP, SiB, SiM) for GaN IC, discrete devices and GaN multi-chip modules. SAL contributes to different tasks including:
- the microfabrication of advanced interconnects for GaN packaging
- Development of “Sinterconnects” for wire-bond less power & RF GaN package
- Integrated high-power GaN module
- Optimized process flow for integration & packaging of SoC GaN discrete devices
- Low parasitic packaging of RF GaN based on chip embedding technologies
- Multi-domain-physics simulation of system/sub-system
- EM characterization of packaged GaN devices & measurements of power module parasitics
Additionally, SAL will contribute to the Use case for High-efficiency RF amplifiers for mobile networks where the design, implementation, and characterization of broadband MMIC PA in 8GHz band is planned.