ALL2GaN will be the backbone for the European Power Electronics Industry by offering an EU-born smart GaN Integration toolbox. The project will provide the base for applications with significantly increased material- and energy efficiency, thus meeting the global energy needs while keeping the CO2 footprint to the minimum.
30 %
average loss reduction across the use cases
437 TWh
average loss reduction per year (worldwide)
218 Mt
saved CO2 per year (worldwide)
ALL2GaN will strengthen the European Power Electronics Industry by offering an EU-born smart GaN Integration Toolbox as a base for applications with significantly increased material- and energy efficiency, thus meeting the global energy needs while keeping the CO2 footprint to the minimum.
The highly ambitious KDT project All2GaN consists of 45 partners from 12 European countries that collaborate in a Pan-European innovation network with the focus on performance and reliability of GaN power and RF technologies to meet a substantial higher utilization level covering the full supply chain from substrates to application systems and end users.
Project Facts
Name: ALL2GaN – Affordable smart GaN IC solutions for greener applications
Duration: May 2023 – April 2026
Total Costs: ~ EUR 60 Mio.
Total Person Months: 5528
Consortium: 45 partners from 12 countries
Coordinator: Infineon Technologies Austria AG
ALL2GaN ...
... is a direct response to the European Green Deal challenge and its goals to transform economies to achieve climate neutrality by 2050, without impeding economic growth and by the sustainable use of natural resources.
... will directly contribute to energy saving and cutting-edge green technology innovation as well as to a globally competitive and resilient European industry.
... presents a building stone toward the aim of the European Chip Act to create a European chip ecosystem. ALL2GaN is linking together major European stakeholders. They range from world class research, design, production, and application capabilities for industrial level development aiming to realize the latest advancements. ALL2GaN enables an important step towards European tech sovereignty.
Vision: Strengthen the European Power Electronics Industry by offering an EU-born smart GaN Integration Toolbox as a base for applications with significantly increased material- and energy efficiency, thus meeting the global energy needs while keeping the CO2 footprint to the minimum.
Mission: Drive collaboration in a Pan-European innovation network with the focus on performance and reliability of GaN power and RF technologies to meet a substantial higher utilization level covering the full supply chain from substrates to application systems and end users.
As part of the All2GaN Project, NanoWired aims at enhancing the efficiency of GaN HEMTs by utilizing Flip Chip technology. The performance evaluation of a synchronous buck converter clearly demonstrates the benefits of this approach: NanoWired Flip Chip GaN significantly reduces losses compared to traditional wire bonding. The half-bridge HEMT devices here are designed and developed by imec using their 100V GaN-IC technology platform.
At the same output current, the difference in efficiency is striking. At 2 A, the NanoWired Flip Chip GaN (400kHz) reaches 94% efficiency, while the wire-bonded version drops to 89%, meaning a 5% reduction in losses. At 4 A, the efficiency gap widens, with the NanoWired Flip Chip maintaining 91% efficiency, while the wire-bonded version falls below 85%, leading to over 6% lower losses. As current increases, the losses in the wire-bonded version rise significantly due to longer current paths and higher inductance, whereas the NanoWired Flip Chip maintains higher efficiency thanks to its optimized electrical design.
The assembly process involved growing NanoWires on the substrate and sintering the chip onto the substrate using KlettSintering, ensuring a highly reliable and low-resistance connection. The buck converter was built, and the characterization was carried out at Silicon Austria Labs (SAL), confirming these remarkable performance improvements.
By replacing traditional wire bonding with NanoWired Flip Chip technology, NanoWired enables next-generation power electronics with lower losses, higher efficiency, and superior thermal performance.
The ALL2GaN project is a highly ambitious project that will carry out industrial research of affordable and green GaN technologies over a large field of climate challenge and social challenges relevant applications ...
ALL2GaN is based on a classical work package structure including 7 work packages and 11 use cases. The project covers the entire vertical value chain of GaN power and RF electronics, from technology, integration and packaging, reliability until applications ...
The ALL2GaN consortium consists of 45 partners from 12 European member states and associated countries constituting a balanced mix of industry and research with complementary skills and expertise ...
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