In this webinar, experts from imec and MinDCet will present monolithically integrated GaN ICs offer fundamental advantages in terms of performance and efficiency moving towards greener power electronics.
During the webinar, improvements in the 100 V GaN IC platform will be discussed, covering GaN epitaxy, technology and design.
About the Speakers:
Name / Surname
Jawad HADID
Aurelien GAUTHIER-BRUN
Olga SYSHCHYK
Öncü Benli Marin Palomo
Organisation / University
imec
imec
imec
MinDCet
Title in the Organisation
Researcher
R&D Engineer
R&D Engineer
IC Design Engineer
Role in ALL2GaN Project
Responsible for MOCVD growth of GaN epitaxial 100 V stacks on Si and SOI in WP1
Responsible for low voltage p-GaN gate HEMT development and device design in WP1Responsible for low voltage p-GaN gate HEMT development and device design in WP1
Responsible for development and fabrication of p-GaN gate HEMT devices and ICs on chip in WP1
Responsible for Design and evaluation of discrete power devices and monolithic GaN ICs on chip in WP1
Academic Background
Jawad Hadid is a researcher at imec. Within GaN EPI team, he is focusing on GaN MOCVD growth for low voltage application. He received his PhD in electronics, microelectronics and nanoelectronics from the University of Lille France in 2021. He worked on the growth of hexagonal boron nitride (h-BN) on nickel by molecular beam epitaxy (MBE). All his work has been done at the Institute of Electronics, Microelectronics and Nanotechnology (IEMN) in Lille, within EPIPHY group (EPItaxy and PHYsics of heterostructures). His study was mainly focusing on the growth and the characterization of materials for electronic applications.
Aurelien Gauthier-Brun is leading the 40V and 100V device development at imec. He received his PhD in Semiconductor Engineering from the University of Lille (France) in 2012 and has extensive industry experience in III-N-based LED and power devices manufacturing, covering epitaxy, process integration, device design and characterization.
Olga Syshchyk, PhD, process integration engineer for 40V-650V GaN-on-SOI platforms at Imec. She received her PhD in Electrical Engineering from the Catholic University of Leuven (Belgium) in 2022. She has experience in development and characterization of III-V devices. She serves as the project manager for GAN-IC-related initiatives focused on space applications.
Öncü Benli Marin Palomo, M.Sc., is a Senior Analog and Power IC Design Engineer at MinDCet NV. She received a joint M.Sc. in Nanoelectronics from KU Leuven (Belgium) and TU Dresden (Germany) in 2018. Since joining MinDCet in 2018, she has worked on power management ICs. Over the past four years, she has served as the Principal Technical Lead for GaN-related developments, overseeing the design, reliability testing, and implementation of advanced GaN IC solutions.
E.Fabris et al.,”Vertical stack reliability of GaN-on-Si buffers for low-voltage applications”, 2021 IEEE International Reliability Physics Symposium (IRPS), doi: 10.1109/IRPS46558.2021.9405097.
A. Roch, et. al."Automation of Electron Channeling Contrast Imaging: Investigation of Dislocations in AlGaN/GaN Heterostructures." Conference Proceedings from the 51st International Symposium for Testing and Failure Analysis. Pasadena, California, USA. (pp. 417-422), https://doi.org/10.31399/asm.cp.istfa2025p0417
A. Benato et al., “Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness”, vol. 150 (115133), Microelectr. Real. 2023, doi.org/10.1016/j.microrel.2023.115133.
O.Syshchyk et al."Device optimization for 200V GaN-on-SOI plaform for monolithicaly integrated power circuits", 2022 IEEE 52nd European Solid-State Device Research Conference (ESSDERC), doi:10.1109/ESSDERC55479.2022.9947150.
Ö. Benli-Marin-Palomo et al."Design, performance and HTOL evaluation of a monolithic 100V/25A GAN IC module", 2026 IEEE Applied Power Electronics Conference and Exposition (APEC)
Ö. Benli-Marin-Palomo et al., "A Monolithic 40 V/20 A GaN Half Bridge IC with Integrated Gate Drivers and Level-shifters," 2024 Energy Conversion Congress & Expo Europe (ECCE Europe), Darmstadt, Germany, 2024, pp. 1-6, doi: 10.1109/ECCEEurope62508.2024.10751964.
Why GaN?
The ALL2GaN project enables improvements in different parts of the GaN power device production chain, combining the expertise of multidisciplinary partners covering the entire value chain. Making use of GaN is a key enabler for making power electronics greener. A key challenge is achieving real, system‑level sustainability, not just higher efficiency, while balancing cost.
ALL2GaN is proud to present the latest video highlighting Use Case 11: “Lighting Application”.
Signify leads the Use Case in cooperation with Infineon, Eindhoven University of Technology, Technical University of Chemnitz and Aalborg University. The Use Case explores the benefits and the reliability of GaN for mainstream LED drivers up to 150W.
The objectives of Use Case 11 are to:
explore the benefits of GaN switches for multiple LED drivers topologies
calculate failure rate of GaN switches for LED drivers
identify non-invasive health indicators to estimate Remaining Useful Life (RUL)
ALL2GaN extends its sincere thanks to Signify for the preparation of this video!
In this webinar, Marziyeh will present research on high-precision switching power amplifiers for next-generation motion systems, such as those used in lithography machines. These systems require extremely accurate current control to enable sub-nanometer positioning accuracy while maintaining high throughput. The presentation will discuss how power-amplifier bandwidth affects the performance of precision mechatronic systems.
Marziyeh will introduce a dual-cell power amplifier architecture that combines a low-frequency, high-voltage power stage with a high-frequency, low-voltage correction stage to achieve both high output power and wide control bandwidth. The talk will also highlight the development of FPGA-based high-resolution digital PWM techniques that enable precise switching control at high frequencies.
This work connects to the ALL2GaN project by addressing the challenges of operating power converters at higher switching frequencies and bandwidths—capabilities that are strongly enabled by GaN technology. Increasing switching speed while maintaining high precision is a key enabler for future GaN-based high-performance power electronics used in advanced motion and industrial systems.
About the Speaker:
Name / Surname
Marziyeh HAJIHEIDARI
Organisation / University
Eindhoven University of Technology
Title in the Organisation
Postdoctoral Researcher
Role in ALL2GaN Project
Partner in Design-for-Reliability (DfR) at Module and System Levels – Task 5.2.3
Academic Background
PhD in Electrical Engineering, Electromechanics & Power Electronics group, Eindhoven University of Technology, 2021-2025.
Key Publication(s)
M. Hajiheidari, B. Vermulst and J. Van Duivenbode, "Low-Distortion Dual-Cell Power Amplifier with Ultra-High Small Signal Bandwidth," 2025 IEEE 10th Southern Power Electronics Conference (SPEC), Johannesburg, South Africa, 2025.
M. Hajiheidari, J. Fushekati, M. Emad, B. J. D. Vermulst, J. van Duivenbode and H. Huisman, "Single-Path High-Resolution Digital PWM Architectures With Cascadability of Delay Lines," in IEEE Open Journal of Power Electronics, vol. 6, pp. 130-143, 2025.
M. Hajiheidari, B. Vermulst, J. van Duivenbode and H. Huisman, "High Bandwidth Power Amplifier with A Shunt Correction Cell," 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia), Jeju Island, Korea, Republic of, 2023, pp. 2105-2111
Why GaN? What excites you about the project?
What excites me about this project is that GaN transistors enable converter topologies that were previously difficult or impractical to implement. Their high switching speed and efficiency open new possibilities for designing high-performance power electronics systems.
What is the biggest challenge in making power electronics greener?
One of the biggest challenges in making power electronics greener is improving the cost and long-term reliability of emerging technologies such as GaN devices, so they can be widely adopted in industrial applications.
In this webinar, Haitz will present the challenges associated with short-circuit events in GaN power devices and the development of detection and protection strategies for these devices. The presented work focuses on experimentally validated protection systems designed to improve the reliability of GaN-based power converters under realistic operating conditions.
This work directly supports Haitz's research activities within the ALL2GaN project, which focus on improving the reliability of GaN-based power converters through advanced short-circuit detection and protection strategies. These solutions are essential to enable the safe deployment of GaN devices in safety-critical applications such as electric vehicles and aircraft power systems.
About the Speaker:
Name / Surname
Haitz GEZALA RODERO
Organisation / University
Mondragon University
Title in the Organisation
PhD Student in Power Electronics
Role in ALL2GaN Project
Development of protection systems against short-circuit events in GaN devices.
Academic Background
BSc in Renewable Energy Engineering and MSc in Power Electronics. Currently pursuing a PhD at Mondragon Unibertsitatea focused on the impact of GaN devices in realistic power converter applications. His research focuses on wide bandgap semiconductors and the development of high-efficiency power converters.
Key Publication(s)
Gezala Rodero H, Garrido Díez D, Aizpuru Larrañaga I, Baraia-Etxaburu I. Short-Circuit Detection and Protection Strategies for GaN E-HEMTs in High-Power Applications: A Review. Electronics. 2025; 14(14):2875. https://doi.org/10.3390/electronics14142875
H. G. Rodero, D. Garrido, I. Baraia-Etxaburu, I. Aizpuru and J. P. Amillano, "Steady-State Temperature Calculation Tool for Multilayer PCBs," in IEEE Transactions on Power Electronics, vol. 41, no. 4, pp. 5812-5830, April 2026, doi: 10.1109/TPEL.2025.3626813
H. Gezala, D. Garrido, I. Baraia-Etxaburu and I. Aizpuru, "Time saving analytical modelling and design of PCBS with through-hole and blind thermal vias," 14th International Conference on Power Electronics, Machines and Drives (PEMD Europe 2025), Turin, Italy, 2025, pp. 97-104, doi: 10.1049/icp.2025.2012.
J. Paniagua, H. Gezala, E. Unamuno, M. Zubiaga and J. Andoni Barrena, "A Dynamic Frequency-and-Voltage Power Flow Simulation Tool for Hybrid AC/DC Power Systems based on Simulink," IECON 2022 – 48th Annual Conference of the IEEE Industrial Electronics Society, Brussels, Belgium, 2022, pp. 1-6, doi: 10.1109/IECON49645.2022.9968708.
Why GaN? What excites you about the project?
GaN technology enables a new generation of highly efficient and compact power converters that can significantly reduce energy losses.
What is the biggest challenge in making power electronics greener?
One of the biggest challenges is integrating high-performance devices like GaN into reliable, scalable, and cost-effective power conversion systems.
The ALL2GaN Insights webinar series brings together leading experts from academia and industry to explore the latest advances in GaN-based power electronics and their role in enabling greener, more efficient energy systems.
Join us every Wednesday for 60 minutes cutting-edge insights into high-performance GaN technologies, innovative device concepts, packaging solutions, and application-driven developments.
Upcoming Webinar Topics & Speakers
#1 -Short-Circuit Detection and Protection Strategies for GaN E-HEMTs in High-Power Applications: A Review
Wednesday, 01.04.2026 at 11 a.m.
Speaker: Haitz Gezala Rodero - Mondragon University
ALL2GaN is proud to present the latest video highlighting Use Case 6: “Bidirectional DC EV Charger Module”, a key innovation initiative within the project portfolio.
The use case is led by Applied Microelectronics (AME) BV in close collaboration with Eindhoven University of Technology, CE-LAB GmbH, and Infineon Technologies Austria AG. Together, the partners are developing a next-generation bidirectional DC EV charger module designed to meet the evolving needs of electric mobility and energy systems integration.
The objective of Use Case 6 is to develop a charger module that is:
Quiet in operation
Highly energy efficient
Optimized for manufacturability
A Modular Approach for European Manufacturing
A central innovation of this use case is its modular design concept, which enables:
Better scalability
Improved manufacturability
Reduced bill of labor
A strong foundation for competitive manufacturing in Europe
ALL2GaN extends its sincere thanks to the team at Applied Microelectronics (AME) BV for preparing this clear and insightful explanatory video and for their leadership in advancing this important use case.
The video presenting Use Case 4: Isolated Power Electronics Building Block is now available online.
Prepared by Daniel Rios Linares, from the Universidad Politecnica de Madrid, the video showcases the latest progress and technical developments achieved within this use case, highlighting its role in advancing smart GaN integration.
We invite you to watch the video and explote how this work contributes to the objectives of ALL2GaN.
Malta - The ALL2GaN Project was presented at EFECS - European Forum for Electronic Components and System - in Malta on 02nd and 3rd December 2025 by the coordinator Herbert Pairitsch. The presentation highlighted the project's vision, strategic objective and its role in strengthening Europe's leadership in next-generation semiconductor technologies.
EFECS 2025 provided an excellent opportunity to engage with key stakeholders from across the European microelectronics and semiconductor community, exchange insights and showcase how ALL2GaN contributes to accelerating the development integration and adoption of GaN technologies in a wide range of applications.
We thank the Chips Joint Undertaking for the successful organization of this important event and for fostering collaboration and innovation within the European semiconductor ecosystem!
As part of this year’s M30 General Assembly, the Work Package Leaders - Karen Geens, Christian Koller, Helmut Brech, Ali Rodhsnghias, Jan Albrecht, Ander Avila - of ALL2GaN engaged in an interactive discussion titled “Innovation Exchange: Building the Future of GaN Together.” The session was moderated by the project coordinator, Herbert Pairitsch, and brought together experts from across the consortium to exchange perspectives on the evolving landscape of Gallium Nitride (GaN) technologies.
The discussion provided a valuable opportunity to reflect on current challenges, explore emerging opportunities, and identify pathways for future innovation and collaboration in the field of wide bandgap (WBG) technologies.
This interactive format encouraged open dialogue and cross-disciplinary thinking — key drivers for advancing sustainable and efficient GaN solutions in Europe.
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