Webinar Series: The Wednesday Webinar Series #4 Date Recorded: 13.05.2026 Recording Now Live on YouTube: https://youtu.be/iHYr8h7LzB0?si=tlW1rZ_9xV0Btz09https://youtu.be/iHYr8h7LzB0?si=tlW1rZ_9xV0Btz09
We are thrilled to announce that the recording for The Wednesday Webinar Series #4 is now available for viewing!
📝 About the Session
This webinar focuses on
The talk is about advanced GaN (Gallium Nitride) power electronics and how this technology is enabling more efficient, greener energy systems and next‑generation electronics.
in particular the speakers focus on:
Gianmauro Pozzovivo, from Infineon, explains current development on 650 GaN-on-Si Power devices describing the progress in production processes with the aim of moving from research to mass production readiness enabling therefore wide adoption in industry and future integrated solution.
Elison Matioli, from EPLF, depicts new device concepts and materials for higfh-performance electronics focusing on efficiency improvement and advance functionality exploring future potential of GaN technology.
Iordan Doytchinov from Corintis, describes hoe GaN enables better thermal management and cooling solutions, integrating them into the electronics systems leading to practical benefits as efficiency, miniaturization and sustainability.
In this webinar, Daniel Ríos will present the design and experimental validation of high-frequency three-phase LLC converters developed for next-generation aircraft DC power systems. The talk will cover resonant converter design, integrated planar magnetics, and innovative wye-delta transformer architectures that enable compact 1 MHz operation with efficiencies exceeding 96%.
The webinar will highlight how wide bandgap (WBG) technologies, particularly Gallium Nitride (GaN), are enabling unprecedented power densities and switching frequencies, making them a key technology for future aerospace electrification. Attendees will gain insight into the challenges of designing high-performance resonant converters and the opportunities they create for More Electric Aircraft (MEA) and other demanding power electronics applications.
About the Speaker:
Name / Surname
Daniel RIOS LINARES
Organisation / University
Universidad Politecnica de Madrid
Title in the Organisation
Assistant Professor
Role in ALL2GaN Project
Use Case 4 Researcher
Academic Background
Electrical and Electronics Engineering
Key Publication(s)
Ríos Linares et al., “High-Gain High-Frequency Three-Phase LLC Resonant Converter Design Based on the Wye–Delta Transformer for Aircraft Applications,” IEEE TPEL, 2024
Mo et al., “Toward Embeddable Digital Twins: A Voxel-Based Approach for Power Converter Temperature Monitoring,” IEEE JESTPE, 2025
Why GaN? What excites you about the project?
GaN enables MHz switching in power electronics, reducing magnetic size and weight while maintaining high efficiency. In All2GaN, we combine GaN, advanced magnetics, and new converter topologies to unlock much higher power densities for more electric, efficient aircraft, making GaN not just the best option, but in some cases the only viable one.
What is the biggest challenge in making power electronics greener?
Knowing the trade-offs, everything is important at the same time: efficiency, cost, material sustainability, size, weight, material usage... but in what amount?
The webinar hosts two participants who cooperate very strictly in the ALL2GaN project, Michael Salter from RISE and Anders Lundskog from SweGaN.
Michael will present the latest results of the RISE GaN HEMT device development in the ALL2GaN project for WP1 including 1) E-mode/D-mode devices with the SweGaN QuanFINE GaN/SiC epi substrate and 2) vertical nanowire HEMT devices.
Starting with an introduction of SweGaN, Anders will continue providing an introduction on the QUANFIne Epitaxy following with an overview on Mg-doping profile tuning.
About the Speakers:
Name / Surname
Michael SALTER
Anders LUNDSKOG
Organisation / University
RISE Research Institute of Sweden
SweGaN
Title in the Organisation
Senior Project Manager
R&D Manager
Role in ALL2GaN Project
RISE Project Leader for engagement in WP1, WP4 and WP5.
Supporting epitaxy on foreign substrates in WP1
Academic Background
Graduate Studies in VLSI Microelectronis at The George Washington University
M.Sc. in Electrical Engineering & Control System at the University of New Hampshire
B.Sc. in Mechanical Engineering at the University of New Hampshire
Phd Linköping university
Why GaN?
The role of RISE in the project as Swedish country coordinator is to support the development of the QUANFine GaN on SiC material towards high power applications. Exploiting the benefits of GaN HEMT for more efficient high power converrters for applications in electrical vehicles, power transmission and conversion for reducing carbon footprint.
To explore the performance of Power QUANFine. It could be the ultimate 1200V device.
Webinar Series: The Wednesday Webinar Series #3 Date Recorded: April 29, 2026 Recording Now Live on YouTube: https://youtu.be/fmK34AqcxxU
We are thrilled to announce that the recording for The Wednesday Webinar Series #3 is now available for viewing!
In this session, the experts from imec (Olga Syshchyk, Jawad Hadid, Aurelien Gauthier - Brun) and MinDCet (Öncü Benli Marin Palomo) from the ALL2GaN consortium provide a comprehensive overview of the complete production chain for 100 V p-GaN HEMT power devices and integrated circuits (ICs). As the demand for compact, high-efficiency power solutions grows, understanding the nuances of manufacturing these advanced devices is essential for scaling GaN technology from the lab to mass production.
📝 About the Session
This presentation offers a detailed walkthrough of the device production chain, covering critical stages from epitaxial growth and wafer processing to packaging and final testing. The speakers highlight the specific challenges and innovations required to manufacture high-quality 100 V p-GaN HEMTs, focusing on yield improvement, process control, and the integration of power devices with control ICs.
The research and industrial insights discussed are a core component of the ALL2GaN project, which aims to bridge the gap between advanced GaN device design and reliable, cost-effective manufacturing. These production capabilities are vital for enabling the widespread adoption of GaN in:
Webinar Series: The Wednesday Webinar Series #1 Date Recorded: April 15, 2026 Recording Now Live on YouTube: https://youtu.be/U40FserkEvw
We are thrilled to announce that the recording for The Wednesday Webinar Series #2 is now available for viewing!
In this session, Marziyeh Hajiheidari from Eindhoven University of Technology presents groundbreaking research on high-precision switching power amplifiers designed for next-generation motion systems. As applications like lithography machines demand sub-nanometer positioning accuracy, the need for power amplifiers that combine high output power with ultra-wide control bandwidth has never been more critical.
📝 About the Session
This presentation offers an in-depth look at a novel dual-cell power amplifier architecture that merges a low-frequency, high-voltage power stage with a high-frequency, low-voltage correction stage. Marziyeh demonstrates how this approach achieves both high power output and the ultra-high small-signal bandwidth required for extreme precision.
The talk also highlights the development of FPGA-based high-resolution digital PWM techniques, which enable precise switching control at high frequencies. This work is a key component of the ALL2GaN project, addressing the challenges of operating power converters at higher switching speeds—a capability strongly enabled by GaN technology.
These advanced power electronics solutions are essential for enabling the next generation of high-performance systems in:
Webinar Series: The Wednesday Webinar Series #1 Date Recorded: April 1, 2026 Recording Now Live on YouTube: https://youtu.be/yfsng-tRMBQ
We are thrilled to announce that the recording for The Wednesday Webinar Series #1 is now available for viewing!
In this session, Haitz Gezala Rodero from Mondragon University delves into the critical challenges surrounding short-circuit events in Gallium Nitride (GaN) power devices. As GaN technology becomes increasingly vital for high-power applications, ensuring device reliability under fault conditions is paramount.
📝 About the Session
This presentation offers a comprehensive review of detection and protection strategies specifically tailored for GaN Enhancement-mode High-Electron-Mobility Transistors (E-HEMTs). Haitz presents experimentally validated protection systems designed to enhance the reliability of GaN-based power converters under realistic operating conditions.
The research discussed is a core component of the ALL2GaN project, which aims to improve the robustness of GaN power converters. These advanced protection solutions are essential for enabling the safe deployment of GaN devices in safety-critical sectors, including:
A Strategic Gathering to Finalize the European GaN Backbone
The ALL2GaN consortium recently convened for its latest General Assembly, held from May 4th to May 5th, 2026, at the prestigious imec facility in Belgium. As the European backbone project dedicated to smart Gallium Nitride (GaN) integration, this meeting marked a critical turning point in our mission.
With the project now entering its final six months, the assembly focused on aligning all partners, finalizing integration roadmaps, and preparing for the successful delivery of our last major milestones.
Key Objectives of the Assembly
Hosted by imec, the two-day meeting provided a high-level platform for our diverse consortium of industry leaders, research institutes, and universities. The primary agenda items included:
Strategic Alignment: Ensuring all partners are synchronized for the final phase of the project.
Integration Roadmaps: Finalizing the technical specifications for smart GaN integration demonstrators.
Industrial Readiness: Discussing the transition from laboratory results to scalable, market-ready solutions.
Deliverable Planning: Confirming the timeline and scope for the final six-month deliverables.
"We Are Ready for the Final Stretch"
The atmosphere at imec was one of focused determination. The General Assembly confirmed that the ALL2GaN project is on track to meet its ambitious goals. By leveraging the synergies between our academic and industrial partners, we are poised to deliver breakthrough innovations that will accelerate the adoption of GaN technology in power electronics.
A Special Thanks to Our Host
We extend our sincere gratitude to imec for hosting this pivotal event. Their state-of-the-art facilities and expertise in semiconductor innovation provided the perfect environment for our consortium to collaborate and strategize.
What Comes Next?
As we embark on the final six months of the ALL2GaN project, our focus shifts to execution. Over the coming weeks and months, expect updates on:
Final validation of integrated GaN modules.
Publication of technical reports and publications.
Preparation for industrial market release.
Participation to high value conferences!
Publication of the ALL2GaN book.
Stay tuned to our website and social media channels for upcoming announcements as we cross the finish line.
The webinar hosts three participants who cooperate very strictly in the ALL2GaN project.
Starting with Gianmauro, he will present the development and industrialization of 650 V GaN-on-Si power technology on 200 mm wafers, covering advances in epitaxy, device processes, and manufacturing readiness. It highlights the enablement of large-scale production of normally-off lateral GaN HEMTs, the qualification of lead products for industrial market release, and briefly outlines future directions toward integrated GaN solutions.
About the Speakers:
Name / Surname
Gianmauro POZZOVIVO
Elison MATIOLI
Iordan DOYTCHINOV
Organisation / University
Infineon Technologies Austria AG
EPFL
Corintis SA
Title in the Organisation
Director
Professor and Director of the POWERlab
Senior Program Manager
Role in ALL2GaN Project
In the All2GaN project, I contribute to WP2 by developing and industrializing best‑in‑class 650V lateral GaN technology (advanced epitaxy and device processing) and advancing integrated high‑voltage GaN solutions through monolithic power ICs and system‑in‑package approaches, targeting production readiness and market release.
Partner in Task 2, O2.3: Breaking the limits: Realizing most advanced GaN HEMT device and integration concepts
Senior Program Manager responsible for leading Corintis contribution on demonstrating value of topology optimized cooling for future high power (data center applications) GaN modules.
Academic Background
PhD in Electrotechnics from TU Vienna (2010), focused on optimizing GaN HEMTs. Joined Infineon Austria in 2010 as an early GaN technology development engineer, working on FEOL development plus wafer- and package-level characterization. From 2015–2020, I managed the development of the first-generation normally-off high-voltage GaN power devices, launched as CoolGaN in 2021. Today, I lead High Voltage GaN Technology Development, managing a team of 20 engineers.
GaN power devices
PhD in Precision Engineering (Cranfield University), EPFL; background as Principle Investigator on AI research related to drone GPS free navigation systems, Corintis related scientific contributions in the area of co-packaged and designed cooling.
What excites you about the project?
ALL2GaN excites me because it’s about speeding up real GaN adoption, giving engineers practical tools and support to integrate GaN across major applications faster and at scale. That’s the kind of push that can make GaN the next mainstream power semiconductor
To develop technologies that can reveal the true capabilities of GaN
The opportunity to enable higher-efficiency power electronics for future data centers by integrating advanced microfluidic cooling directly into next-generation GaN power modules.
What is the biggest challenge in making power electronics greener?
The biggest challenge is getting GaN into real products at scale, making sure it’s reliable in the field, cost-competitive, and the supply chain can actually support volume. That’s when “greener” savings become real.
To make full use of the GaN properties
Managing rising heat flux while ensuring efficiency, reliability, and scalable manufacturing.
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