The Wednesday Webinar Series: #5 QuanFINE high performance substrates for power applications and devices
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The webinar hosts two participants who cooperate very strictly in the ALL2GaN project, Michael Salter from RISE and Anders Lundskog from SweGaN.
Michael will present the latest results of the RISE GaN HEMT device development in the ALL2GaN project for WP1 including 1) E-mode/D-mode devices with the SweGaN QuanFINE GaN/SiC epi substrate and 2) vertical nanowire HEMT devices.
Starting with an introduction of SweGaN, Anders will continue providing an introduction on the QUANFIne Epitaxy following with an overview on Mg-doping profile tuning.
About the Speakers:
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| Name / Surname | Michael SALTER | Anders LUNDSKOG |
| Organisation / University | RISE Research Institute of Sweden | SweGaN |
| Title in the Organisation | Senior Project Manager | R&D Manager |
| Role in ALL2GaN Project |
RISE Project Leader for engagement in WP1, WP4 and WP5. |
Supporting epitaxy on foreign substrates in WP1 |
| Academic Background |
Graduate Studies in VLSI Microelectronis at The George Washington University M.Sc. in Electrical Engineering & Control System at the University of New Hampshire B.Sc. in Mechanical Engineering at the University of New Hampshire |
Phd Linköping university |
| Why GaN? |
The role of RISE in the project as Swedish country coordinator is to support the development of the QUANFine GaN on SiC material towards high power applications. Exploiting the benefits of GaN HEMT for more efficient high power converrters for applications in electrical vehicles, power transmission and conversion for reducing carbon footprint. |
To explore the performance of Power QUANFine. It could be the ultimate 1200V device. Costs are challenging for the green aspects. |
| https://www.linkedin.com/in/michaelfsalter/ | https://www.linkedin.com/in/anders-lundskog-44872047 |