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The webinar hosts three participants who cooperate very strictly in the ALL2GaN project.

Starting with Gianmauro, he will present the development and industrialization of 650 V GaN-on-Si power technology on 200 mm wafers, covering advances in epitaxy, device processes, and manufacturing readiness. It highlights the enablement of large-scale production of normally-off lateral GaN HEMTs, the qualification of lead products for industrial market release, and briefly outlines future directions toward integrated GaN solutions.

 

About the Speakers:

 

Name / Surname	Gianmauro POZZOVIVO	Elison MATIOLI	Iordan DOYTCHINOV
Organisation / University	Infineon Technologies Austria AG	EPFL	Corintis SA
Title in the Organisation	Director	Professor and Director of the POWERlab	Senior Program Manager
Role in ALL2GaN Project	In the All2GaN project, I contribute to WP2 by developing and industrializing best‑in‑class 650V lateral GaN technology (advanced epitaxy and device processing) and advancing integrated high‑voltage GaN solutions through monolithic power ICs and system‑in‑package approaches, targeting production readiness and market release.	Partner in Task 2, O2.3: Breaking the limits: Realizing most advanced GaN HEMT device and integration concepts	Senior Program Manager responsible for leading Corintis contribution on demonstrating value of topology optimized cooling for future high power (data center applications) GaN modules.
Academic Background	PhD in Electrotechnics from TU Vienna (2010), focused on optimizing GaN HEMTs. Joined Infineon Austria in 2010 as an early GaN technology development engineer, working on FEOL development plus wafer- and package-level characterization. From 2015–2020, I managed the development of the first-generation normally-off high-voltage GaN power devices, launched as CoolGaN in 2021. Today, I lead High Voltage GaN Technology Development, managing a team of 20 engineers.	GaN power devices	PhD in Precision Engineering (Cranfield University), EPFL; background as Principle Investigator on AI research related to drone GPS free navigation systems, Corintis related scientific contributions in the area of co-packaged and designed cooling.
What excites you about the project?	ALL2GaN excites me because it’s about speeding up real GaN adoption, giving engineers practical tools and support to integrate GaN across major applications faster and at scale. That’s the kind of push that can make GaN the next mainstream power semiconductor	To develop technologies that can reveal the true capabilities of GaN	The opportunity to enable higher-efficiency power electronics for future data centers by integrating advanced microfluidic cooling directly into next-generation GaN power modules.
What is the biggest challenge in making power electronics greener?	The biggest challenge is getting GaN into real products at scale, making sure it’s reliable in the field, cost-competitive, and the supply chain can actually support volume. That’s when “greener” savings become real.	To make full use of the GaN properties	Managing rising heat flux while ensuring efficiency, reliability, and scalable manufacturing.
LinkedIn	https://www.linkedin.com/in/gianmauro-pozzovivo-66a99a26/	https://www.linkedin.com/in/elison-matioli-74ab1586/	https://www.linkedin.com/in/iordan-doytchinov-21b18045/