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In this webinar, experts from imec and MinDCet will present monolithically integrated GaN ICs offer fundamental advantages in terms of performance and efficiency moving towards greener power electronics.

During the webinar, improvements in the 100 V GaN IC platform will be discussed, covering GaN epitaxy, technology and design.

 

About the Speakers:

 

Name / Surname	Jawad HADID	Aurelien GAUTHIER-BRUN	Olga SYSHCHYK	Öncü Benli Marin Palomo
Organisation / University	imec	imec	imec	MinDCet
Title in the Organisation	Researcher	R&D Engineer	R&D Engineer	IC Design Engineer
Role in ALL2GaN Project	Responsible for MOCVD growth of GaN epitaxial 100 V stacks on Si and SOI in WP1	Responsible for low voltage p-GaN gate HEMT development and device design in WP1Responsible for low voltage p-GaN gate HEMT development and device design in WP1	Responsible for development and fabrication of p-GaN gate HEMT devices and ICs on chip in WP1	Responsible for Design and evaluation of discrete power devices and monolithic GaN ICs on chip in WP1
Academic Background	Jawad Hadid is a researcher at imec. Within GaN EPI team, he is focusing on GaN MOCVD growth for low voltage application. He received his PhD in electronics, microelectronics and nanoelectronics from the University of Lille France in 2021. He worked on the growth of hexagonal boron nitride (h-BN) on nickel by molecular beam epitaxy (MBE). All his work has been done at the Institute of Electronics, Microelectronics and Nanotechnology (IEMN) in Lille, within EPIPHY group (EPItaxy and PHYsics of heterostructures). His study was mainly focusing on the growth and the characterization of materials for electronic applications.	Aurelien Gauthier-Brun is leading the 40V and 100V device development at imec. He received his PhD in Semiconductor Engineering from the University of Lille (France) in 2012 and has extensive industry experience in III-N-based LED and power devices manufacturing, covering epitaxy, process integration, device design and characterization.	Olga Syshchyk, PhD, process integration engineer for 40V-650V GaN-on-SOI platforms at Imec. She received her PhD in Electrical Engineering from the Catholic University of Leuven (Belgium) in 2022. She has experience in development and characterization of III-V devices. She serves as the project manager for GAN-IC-related initiatives focused on space applications.	Öncü Benli Marin Palomo, M.Sc., is a Senior Analog and Power IC Design Engineer at MinDCet NV. She received a joint M.Sc. in Nanoelectronics from KU Leuven (Belgium) and TU Dresden (Germany) in 2018. Since joining MinDCet in 2018, she has worked on power management ICs. Over the past four years, she has served as the Principal Technical Lead for GaN-related developments, overseeing the design, reliability testing, and implementation of advanced GaN IC solutions.
LinkedIn	https://www.linkedin.com/in/jawad-hadid-859460315/	https://www.linkedin.com/in/aureliengb/	https://www.linkedin.com/in/olga-syshchyk-a26732260/	https://www.linkedin.com/in/%C3%B6nc%C3%BC-benli/

Key Publications

E.Fabris et al.,”Vertical stack reliability of GaN-on-Si buffers for low-voltage applications”, 2021 IEEE International Reliability Physics Symposium (IRPS), doi: 10.1109/IRPS46558.2021.9405097. A. Roch, et. al."Automation of Electron Channeling Contrast Imaging: Investigation of Dislocations in AlGaN/GaN Heterostructures." Conference Proceedings from the 51st International Symposium for Testing and Failure Analysis. Pasadena, California, USA. (pp. 417-422), https://doi.org/10.31399/asm.cp.istfa2025p0417 A. Benato et al., “Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness”, vol. 150 (115133), Microelectr. Real. 2023, doi.org/10.1016/j.microrel.2023.115133. O.Syshchyk et al."Device optimization for 200V GaN-on-SOI plaform for monolithicaly integrated power circuits", 2022 IEEE 52nd European Solid-State Device Research Conference (ESSDERC), doi:10.1109/ESSDERC55479.2022.9947150. Ö. Benli-Marin-Palomo et al."Design, performance and HTOL evaluation of a monolithic 100V/25A GAN IC module", 2026  IEEE Applied Power Electronics Conference and Exposition (APEC) Ö. Benli-Marin-Palomo et al., "A Monolithic 40 V/20 A GaN Half Bridge IC with Integrated Gate Drivers and Level-shifters," 2024 Energy Conversion Congress & Expo Europe (ECCE Europe), Darmstadt, Germany, 2024, pp. 1-6, doi: 10.1109/ECCEEurope62508.2024.10751964.

Why GaN?

The ALL2GaN project enables improvements in different parts of the GaN power device production chain, combining the expertise of multidisciplinary partners covering the entire value chain. Making use of GaN is a key enabler for making power electronics greener. A key challenge is achieving real, system‑level sustainability, not just higher efficiency, while balancing cost.