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In this webinar, Marziyeh will present research on high-precision switching power amplifiers for next-generation motion systems, such as those used in lithography machines. These systems require extremely accurate current control to enable sub-nanometer positioning accuracy while maintaining high throughput. The presentation will discuss how power-amplifier bandwidth affects the performance of precision mechatronic systems.

Marziyeh will introduce a dual-cell power amplifier architecture that combines a low-frequency, high-voltage power stage with a high-frequency, low-voltage correction stage to achieve both high output power and wide control bandwidth. The talk will also highlight the development of FPGA-based high-resolution digital PWM techniques that enable precise switching control at high frequencies.

This work connects to the ALL2GaN project by addressing the challenges of operating power converters at higher switching frequencies and bandwidths—capabilities that are strongly enabled by GaN technology. Increasing switching speed while maintaining high precision is a key enabler for future GaN-based high-performance power electronics used in advanced motion and industrial systems.

 

About the Speaker:

 

Name / Surname	Marziyeh HAJIHEIDARI
Organisation / University	Eindhoven University of Technology
Title in the Organisation	Postdoctoral Researcher
Role in ALL2GaN Project	Partner in Design-for-Reliability (DfR) at Module and System Levels – Task 5.2.3
Academic Background	PhD in Electrical Engineering, Electromechanics & Power Electronics group, Eindhoven University of Technology, 2021-2025.
Key Publication(s)	M. Hajiheidari, B. Vermulst and J. Van Duivenbode, "Low-Distortion Dual-Cell Power Amplifier with Ultra-High Small Signal Bandwidth," 2025 IEEE 10th Southern Power Electronics Conference (SPEC), Johannesburg, South Africa, 2025. M. Hajiheidari, J. Fushekati, M. Emad, B. J. D. Vermulst, J. van Duivenbode and H. Huisman, "Single-Path High-Resolution Digital PWM Architectures With Cascadability of Delay Lines," in IEEE Open Journal of Power Electronics, vol. 6, pp. 130-143, 2025. M. Hajiheidari, B. Vermulst, J. van Duivenbode and H. Huisman, "High Bandwidth Power Amplifier with A Shunt Correction Cell," 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia), Jeju Island, Korea, Republic of, 2023, pp. 2105-2111
Why GaN? What excites you about the project?	What excites me about this project is that GaN transistors enable converter topologies that were previously difficult or impractical to implement. Their high switching speed and efficiency open new possibilities for designing high-performance power electronics systems.
What is the biggest challenge in making power electronics greener?	One of the biggest challenges in making power electronics greener is improving the cost and long-term reliability of emerging technologies such as GaN devices, so they can be widely adopted in industrial applications.
LinkedIn Profile	www.linkedin.com/in/marziyeh-hajiheidari-1aa608129