As part of the All2GaN Project, NanoWired aims at enhancing the efficiency of GaN HEMTs by utilizing Flip Chip technology.  The performance evaluation of a synchronous buck converter clearly demonstrates the benefits of this approach: NanoWired Flip Chip GaN significantly reduces losses compared to traditional wire bonding. The half-bridge HEMT devices here are designed and developed by imec using their 100V GaN-IC technology platform.

At the same output current, the difference in efficiency is striking. At 2 A, the NanoWired Flip Chip GaN (400kHz) reaches 94% efficiency, while the wire-bonded version drops to 89%, meaning a 5% reduction in losses. At 4 A, the efficiency gap widens, with the NanoWired Flip Chip maintaining 91% efficiency, while the wire-bonded version falls below 85%, leading to over 6% lower losses. As current increases, the losses in the wire-bonded version rise significantly due to longer current paths and higher inductance, whereas the NanoWired Flip Chip maintains higher efficiency thanks to its optimized electrical design.

The assembly process involved growing NanoWires on the substrate and sintering the chip onto the substrate using KlettSintering, ensuring a highly reliable and low-resistance connection. The buck converter was built, and the characterization was carried out at Silicon Austria Labs (SAL), confirming these remarkable performance improvements.

By replacing traditional wire bonding with NanoWired Flip Chip technology, NanoWired enables next-generation power electronics with lower losses, higher efficiency, and superior thermal performance.