On 3 November 2025, the ALL2GaN consortium officially kicked off the Month 30 General Assembly, hosted by the Fraunhofer Institute for Microstructure of Materials and Systems IMWS in Halle (Saale), Germany.

With 60 participants representing 45 consortium partners, this meeting marked an important milestone as the project enters its third year of implementation. The General Assembly provides an excellent platform to celebrate progress achieved so far, exchange insights among partners, and align on the next steps toward advancing sustainable innovation in wide bandgap (WBG) technologies.

Throughout the event, participants are engaging in inspiring discussions, sharing project updates, and strengthening collaboration across the consortium — reinforcing ALL2GaN’s role as a European backbone project for smart GaN integration.

Together, we continue to work towards the green transition by pushing the boundaries of Gallium Nitride (GaN) technology, fostering innovation, and contributing to a more sustainable future.

Hosted by:
Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle (Saale), Germany